Operation and Modeling of the MOS Transistor

Yannis Tsividis0195170148, 9780195170146

The Second Edition of this well respected book is fully updated, making several key improvements in content, organization and pedagogy. The text has also been enhanced by changing notation to standard units of measurement, introducing an “Overview of the MOS Transistor” in the first chapter, and increasing the number of examples. The author has also added a new chapter (10) on CAD models to take advantage of the widespread use of simulation software. – This text refers to an out of print or unavailable edition of this title.

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Table of contents :
TOC……Page 15
Ch 01 – Semiconductors, Junctions, and MOSFET Overview……Page 21
Ch 02 – The Two – Terminal MOS Structure……Page 70
Ch 03 – The Three – Terminal MOS Structure……Page 111
Ch 04 – The Four – Terminal MOS Structure……Page 145
Ch 05 – MOS Transistors with Ion – Implanted Channels……Page 227
Ch 06 – Small – Dimension Effects……Page 268
Ch 07 – The MOS Transisotr in Dynamic Operation – Large-Signal Modeling……Page 332
Ch 08 – Small – Signal Modeling for Low and Medium Frequencies……Page 379
Ch 09 – High – Frequency Small – Signal Models……Page 460
Ch 10 – MOSFET Modeling for Circuit Simulation……Page 533
App A – Energy Bands and Related Concepts……Page 576
App B – Basic Laws of Electrostatics in One Dimension……Page 585
App C – Charge Density, Electric Field, and Potential in the pn Junction……Page 591
App D – Energy Band Diagrams for the Two – Terminal MOS Structure……Page 593
App E – Charge Density, Electric Field, and Potential in the Two – Terminal MOS Structure……Page 597
App F – General Analysis of the Two – Terminal MOS Structure……Page 599
App G – Careful Definitions for the Limits of Moderate Inversion……Page 603
App H – Energy Band Diagrams for the Three – Terminal MOS Structure……Page 606
App I – General Analysis of the Three – Terminal MOS Structure……Page 610
App J – Drain Current Formulation using Quasi – Fermi Potentials……Page 613
App K – Results of a Detailed Formulation for the Drain Current ………Page 617
App L – Evaluation of the Intrinsic Transient Source and Drain Currents……Page 619
App M – Charges for the Accurate Strong – Inversion Model……Page 622
App N – Quantities used in the Derivation of the Non-Quasi-Static Y-Parameter Model……Page 625
Index……Page 628