Diffusion in Semiconductors

C.E. Allen, D.L. Beke, H. Bracht, C.M. Bruff, M.B. Dutt, G. Erdelyi, P. Gas, F.M. d’Heurle, G.E. Murch, E.G. Seebauer, B.L. Sharma, N.A. Stolwijk3-540-60964-4, 9783540609643

Subvolume A of two subvolumes on Diffusion in Semi-conductors and Non-Metallic Solids consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.