Lecture Notes on Principles of Plasma Processing

Francis F. Chen, Jane P. Chang0306474972

Отличные лекции по физике плазмы с хорошими иллюстрациями. Один из авторов Ф.Ф. Чен хорошо известен среди специалистов по физ. плазмы. Некотрые книги были переведены на русский язык. Данные лекции написаны простым языком, студенты более-менее знающие англ. язык смогут читать без проблем. ————————————————————- Why study plasma processing? Because we can’t get along without computer chips and mobile phones these days. About half the steps in making a semicon- ductor circuit require a plasma, and plasma machines ac- count for most of the equipment cost in a “fab “. Design- ers, engineers, and technicians need to know how a plasma behaves.

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Table of contents :
Lecture Notes on Principles of Plasma Processing……Page 1
Preface……Page 2
Table of Contents……Page 4
I. What is a plasma ?……Page 7
II. Plasma fundamentals……Page 9
III. Gas discharge fundamentals……Page 17
IV. Introduction to plasma sources……Page 31
V. RIE discharges……Page 37
VI. ECR sources……Page 53
VII. Inductively coupled plasmas (ICPs)……Page 55
VIII. Helicon wave sources and HDPs……Page 67
IX. Discharge equilibrium……Page 75
XI. Remote diagnostics……Page 81
XII. Langmuir probes……Page 85
XIII. Other local diagnostics……Page 99
I. Plasma processing……Page 104
II. Applications in Microelectronics……Page 105
I. Kinetic theory……Page 108
II. Practical gas kinetic models and macroscopic properties……Page 114
III. Collision dynamics……Page 124
I. Atomic energy levels……Page 129
II. Atomic collisions……Page 130
III. Elastic collisions……Page 133
IV. Inelastic collisions……Page 134
I. Molecular energy levels……Page 141
II. Selection rule for optical emission of molecules……Page 143
III. Electron collisions with molecules……Page 144
IV. Heavy particle collisions……Page 146
V. Gas phase kinetics……Page 147
I. Optical emission spectroscopy……Page 154
II. Laser induced fluorescence……Page 164
III. Laser interferometry……Page 165
IV. Full-wafer interferometry……Page 166
V. Mass spectrometry……Page 167
II. Surface reactions……Page 170
III. Loading……Page 180
IV. Selectivity……Page 181
V. Detailed reaction modeling……Page 182
I. Fundamentals of feature evolution in plasma etching……Page 185
II. Predictive modeling……Page 187
III. Mechanisms of profile evolution……Page 188
IV. Profile simulation……Page 192
V. Plasma damage……Page 195
I. Front-end challenges……Page 200
II. Back-end challenges……Page 202
III. Patterning nanometer features……Page 205
IV. Deep reactive etch for MEMS……Page 206
V. Plasma-induced damage……Page 207
VI. Species control in plasma reactors……Page 208
Sample homework and exam problems – Part A: Plasma physics……Page 210
Sample homework and exam problems – Part B: Plasma chemistry……Page 232