Silicon carbide microelectromechanical systems for harsh environments

Rebecca Cheung1860946240, 9781860946240

This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product.

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Table of contents :
CONTENTS……Page 8
Preface……Page 6
1 Introduction……Page 12
2 SiC Material Properties……Page 14
3.1.1 Bulk micromachining……Page 16
3.1.2 Surface micromachining……Page 18
4 Surface Modification……Page 19
5 Frequency Tuning of the SiC MEMS……Page 23
7 Application Examples……Page 25
References……Page 26
1 Introduction……Page 29
2 Deposition Issues Related to SiC for MEMS……Page 30
3.1 Epitaxial 3C-SiC Films……Page 32
3.2 Polycrystalline 3C-SiC Films……Page 37
4 Plasma Enhanced Chemical Vapor Deposition……Page 38
5.2 Epitaxial 3C-SiC Films……Page 40
5.3 Polycrystalline 3C-SiC Films……Page 42
6 Doping ofLPCVDPoly-SiC Films……Page 48
7 Other Deposition Methods……Page 51
8 Conclusions……Page 52
References……Page 53
2.1 Thermal Stability of Ohmic Contacts……Page 57
2.2 Thermal Stability of Rectifying Contacts……Page 68
3.1 Introduction……Page 75
3.2 Al-based Contacts……Page 81
3.3 Al-free Contacts……Page 83
4.2 Thermodynamics……Page 88
4.4 Issues……Page 90
4.6 Alloying……Page 96
5 Effects of Defects on Schottky Contacts……Page 99
6 Summary……Page 103
Acknowledgments……Page 106
References……Page 107
1 Introduction……Page 113
2.1 Plasma Creation……Page 115
2.2.1 Sputtering……Page 116
2.2.3 Ion-assisted plasma etching……Page 117
2.3.2 Reactive ion etching (RIE)……Page 119
2.3.3 Electron-cyclotron resonance (ECR)……Page 120
2.3.4 Inductive coupled-plasma (ICP)……Page 121
3 Plasma Etching of Silicon Carbide……Page 122
4 Plasma Chemistries……Page 127
5 Mask Materials……Page 130
6 Recent Developments and Future Trends……Page 133
7 Summary……Page 134
References……Page 136
1 Introduction……Page 139
1.2 Fields of Applications……Page 141
1.3 Available Material Systems……Page 144
1.4 SiC MEMS Fabrication Technologies……Page 148
2 SiC MEMS Devices……Page 149
2.1.1 Young’s modulus and residual stress……Page 150
2.1.2 Piezoresistive effect……Page 151
2.2 Pressure Sensors……Page 152
2.3 Accelerometers……Page 155
2.4 Resonator Structures……Page 158
2.5 Motors……Page 159
2.6 Wear Resistant Devices……Page 161
2.7.1 Field effect gas sensor devices……Page 163
2.7.2 Microhotplates……Page 167
2.8.1 Light emitting diodes……Page 169
2.8.2 Photodetectors……Page 170
2.9 Radiation Detectors……Page 173
2.10 RF MEMS……Page 174
2.11 SiCNEMS……Page 175
3 Conclusions and Outlook……Page 177
4 Acknowledgment……Page 180
References……Page 181
Appendix A……Page 192