Applications of silicon-germanium heterostructure devices

C.K Maiti, G.A Armstrong0750307234, 9780750307239, 9780585488295

The most significant feature of this work is that it combines three distinct topics – technology, device design and simulation, and applications – in a comprehensive way.
Readership
This book is intended for use by senior undergraduate or first-year graduate students in Applied Physics, Electronic and Electrical Engineering, and Materials Sciences, and as a reference for engineers and scientists involved in semiconductor device research and development for RF applications.

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Table of contents :
CONTENTS……Page 7
PREFACE……Page 13
1. INTRODUCTION……Page 17
2. FILM GROWTH AND MATERIAL PARAMETERS……Page 48
3. PRINCIPLE OF SIGE HBTS……Page 89
4. DESIGN OF SIGE HBTS……Page 120
5. SIMULATION OF SIGE HBTS……Page 168
6. STRAINED-SI HETEROSTRUCTURE FETS……Page 212
7. SIGE HETEROSTRUCTURE FETS……Page 254
8. METALLIZATION AND HETEROSTRUCTURE SCHOTTKY DIODES……Page 288
9. SIGE OPTOELECTRONIC DEVICES……Page 326
10. RF APPLICATIONS OF SIGE HBTS……Page 375
Index……Page 413