Silicon Carbide Materials Processing Devices

Zhe Chuan Feng and Jian H.Zhao (Edt)0-203-49649-3, 0-203-59496-7, 1-59169-023-4

Table of contents :
Book Cover……Page 1
Half-Title……Page 2
Title……Page 5
Dedication……Page 6
Copyright……Page 7
Contents……Page 8
About the Series……Page 10
Preface……Page 12
1 Epitaxial Growth of High-Quality Silicon Carbide: Fundamentals and Recent Progress……Page 13
2 Surface Characterization of 6H-SiC Reconstructions……Page 56
3 Exciton and Defect Photoluminescence from SiC……Page 99
4 Deep-Level Defects in SiC Materials and Devices……Page 140
5 Ion-Implantation in SiC……Page 182
6 Ohmic Contacts to SiC for High Power and High Temperature Device Applications……Page 221
7 SiC Avalanche Breakdown and Avalanche Photodiodes……Page 297
8 Porous SiC Technology……Page 339
Index……Page 408