Semiconductor Nanostructures for Optoelectronic Applications

Todd D. Steiner1580537510, 9781580537513, 9781580537520

Researchers at a number of US universities review the current status of semiconductor nanostructure growth and materials development, and of semiconductor devices using nanostructures with a particular emphasis on three-dimensional nanostructures that have emerged during the past decade. They cover crystal, thin-film, and nanostructure growth technologies; quantum dot infrared photodetectors; the theory of quantum dot lasers; high-speed quantum dot lasers; nanostructures based on zinc oxide; antimony-based materials for electro-optics; growth, structures, and optical properties of III-nitride quantum dots; self-assembled Germanium nano-islands on silicon and potential applications; and carbon nanotube engineering and physics.

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Table of contents :
Team LiB……Page 1
Cover……Page 2
Contents……Page 7
1.2 Growth……Page 13
1.4 Materials for Semiconductor Nanostructures……Page 14
1.5 Summary……Page 15
2.1 Introduction……Page 17
2.2 Review of Thermodynamics……Page 18
2.3 Bulk Crystal Growth Techniques……Page 20
2.4 Epitaxial Growth Techniques……Page 28
2.5 Thin-Film Deposition Techniques……Page 41
2.6 Growth of Nanostructures……Page 46
3.1 Introduction……Page 57
3.2 QD and QDIP Structure Growth and Characterization……Page 61
3.3 QDIP Device Characteristics……Page 88
3.4 Prognosis……Page 119
4.1 Introduction: Dimensionality and Laser Performance……Page 125
4.3 Progress in Fabricating QD Lasers……Page 127
4.4 State-of-the-Art Complications……Page 128
4.5 Novel Designs of QD Lasers with Improved Threshold and Power Characteristics……Page 160
4.6 Other Perspectives……Page 163
5.1 Introduction……Page 171
5.2 MBE Growth of Self-Organized QDs and Their Electronic Properties……Page 172
5.3 Separate Confinement Heterostructure QD Lasers and Their Limitations……Page 175
5.4 Tunnel Injection of Carriers in QDs……Page 180
5.5 Characteristics of High-Speed Tunneling-Injection QD Lasers……Page 184
5.6 Conclusion……Page 195
6.1 Introduction……Page 199
6.2 Growth Techniques……Page 203
6.3 Characterizations……Page 223
6.4 Device Applications……Page 231
7.1 Introduction……Page 241
7.2 III-Sb Binary Compounds: GaSb, AISb, and InSb……Page 247
7.3 InAsSb……Page 262
7.4 InTISb……Page 271
7.5 InBiSb……Page 274
7.6 InTIAsSb……Page 278
7.7 InAsSb/InAsSbP for IR lasers……Page 279
7.8 GaSb/InAs Type II Superlattice for IR Photodetectors……Page 285
8.1 Introduction……Page 301
8.2 Growth of III-Nitride QDs……Page 303
8.3 Optical Properties of III-Nitride QDs……Page 329
8.4 Summary……Page 355
9.2 Heteropitaxy Mechanisms……Page 361
9.3 Uniform Ge Islands……Page 362
9.4 Registration and Regimrntation of Ge Islands……Page 367
9.5 Novel Device Applications……Page 374
9.6 Conclusion……Page 379
10.1 Introduction……Page 383
10.2 Controlled Fabrication of Uniform Nanotubes in a Highly Ordered Array……Page 385
10.3 Interfacing with Biomolecules and Cells……Page 391
10.4 Intrinsic Quantum Electromechanical Couplings……Page 394
10.5 Extrinsic Coupling to Radiation Fields……Page 403
10.6 Heterojunction Nanotubes……Page 404
10.7 Prospects for Future Advances……Page 408
Acronyms……Page 415
About the Editor……Page 419
Index……Page 421