Advances in Silicon Carbide Processing and Applications

Stephen E. Saddow, Anant Agarwal9781580537407, 1580537405

Written by and for electrical engineers, this volume focuses on two of the most promising applications of SiC technology: gas and chemical sensing, and electric vehicle motor drive and control. The contributors also address in some detail the underlying device and processing issues that enable these applications areas to be served by this technology. After reviewing the status of the technology as of 2003, they take the two application areas in turn. Then they step back and explore SiC implantation technology, which they identify as key because the properties of the SiC lattice precludes using thermal diffusion to achieve planar selective doping over the surface of single-crystal wafers.

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Table of contents :
Team LiB……Page 1
Cover……Page 2
Contents……Page 9
Preface……Page 13
Acknowledgments……Page 15
1.1 General Properties……Page 17
1.2 History……Page 20
1.3 Crystalline Structure……Page 24
1.4 Crystal Growth……Page 27
1.5 Epitaxial Growth……Page 34
1.6 Defects……Page 37
1.7 Commercial Outlook……Page 38
1.8 Summary……Page 41
References……Page 42
2.1 Introduction……Page 45
2.2 Detection Mechanism of Field-Effect Gas Sensors……Page 46
2.3 Field-Effect Chemical Gas Sensor Devices……Page 54
2.4 Sensor Properties at Elevated Temperatures, Influence of Hydrogen……Page 65
2.5 More Sensor Properties……Page 69
2.6 Experimental……Page 73
2.7 Applications……Page 75
2.8 Outlook and Conclusions……Page 78
References……Page 79
3.1 DC-DC Conversion……Page 85
3.2 DC-AC Power Conversion……Page 96
3.3 Pulsed-Power Applications……Page 107
3.4 Thermal Management and High-Voltage Packaging……Page 113
References……Page 122
4.1 Introduction……Page 125
4.2 As-Implanted Profiles……Page 130
4.3 Implant Annealing……Page 144
4.4 Technology Barriers and Suggestions for Future Work……Page 163
References……Page 164
5.1 Introduction……Page 171
5.2 SiC UMOSFET……Page 172
5.3 SiC DIMOSFET……Page 179
5.4 SiC LDMOS……Page 185
5.5 Summary and Future Development……Page 187
References……Page 188
6.2 Device Structures and Operation of Power BJTs……Page 193
6.3 Design of the Epitaxial Power BJT……Page 197
6.4 Process Integration……Page 202
6.5 1.2-kV Power BJTs……Page 204
6.6 Design and Fabrication of UHF Transistors……Page 208
6.7 Future Work……Page 215
References……Page 216
About the Editors……Page 219
Index……Page 221