Radio Frequency Transistors: Principles and Practical Applications

Norman Dye, Helge Granberg0750672811, 9780750672818

Radio Frequency Transistors: Principles and Practical Applications is a complete tool kit for successful RF circuit design. As cellular and satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth of practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. The book focuses primarily on the more difficult area of high power transistor amplifier design and construction.
An entire chapter devoted solely to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors, showing clearly why LDMOS is the designers choice for high power, linear amplifiers in todays rapidly expanding digital world of communications. Coverage also includes applications of LDMOS RF high power transistors in current generation cellular technologies, the design of LDMOS high power amplifiers, and comments about the latest efforts to model LDMOS RF power devices.
Other topics covered include the selection of matched high power RF transistors, input impedance matching of high power transistors, interstage matching, and capacitors and inductors at radio frequencies.

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Table of contents :
CONTENTS……Page 7
D.C. SPECIFICATIONS……Page 17
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS……Page 21
POWER TRANSISTORS: FUNCTIONAL CHARACTERISTICS……Page 25
LOW POWER TRANSISTORS: FUNCTIONAL CHARACTERISTICS……Page 30
LINEAR MODULES: FUNCTIONAL CHARACTERISTICS……Page 34
POWER MODULES: FUNCTIONAL CHARACTERISTICS……Page 42
DATA SHEETS OF THE FUTURE……Page 46
2 RF Transistor Fundamentals……Page 47
TRANSISTOR CHARACTERISTICS IN SPECIFIC APPLICATIONS……Page 48
BANDWIDTH CONSIDERATIONS IN SELECTING TRANSISTORS……Page 50
OTHER FACTORS IN RF POWER TRANSISTOR SELECTION……Page 54
INSIDE MOTOROLAÌS IMPEDANCE MATCHING PROGRAM……Page 0
TYPES OF TRANSISTORS……Page 59
COMPARING THE PARAMETERS……Page 60
CIRCUIT CONFIGURATIONS……Page 64
COMMON EMITTER AND COMMON SOURCE……Page 66
COMMON BASE AND COMMON GATE……Page 68
COMMON COLLECTOR AND COMMON DRAIN……Page 70
CLASSES OF OPERATION……Page 73
FORMS OF MODULATION……Page 76
BIASING TO LINEAR OPERATION……Page 80
OPERATING TRANSISTORS IN A PULSE MODE……Page 88
DIE TEMPERATURE AND ITS EFFECT ON RELIABILITY……Page 91
OTHER RELIABILITY CONSIDERATIONS……Page 97
TYPES OF PACKAGES……Page 103
THE EMITTER/SOURCE INDUCTANCE……Page 109
LAYING OUT A CIRCUIT BOARD……Page 113
TIPS FOR SYSTEMATIC PC LAYOUT DESIGN……Page 118
MOUNTING RF DEVICES……Page 119
RF MODULES……Page 125
SINGLE-ENDED, PARALLEL, OR PUSH-PULL……Page 129
STABILITY CONSIDERATIONS……Page 153
INDUCTORS……Page 152
MODELING CAPACITORS AT LOW IMPEDANCES……Page 151
THE INPUT IMPEDANCE OF A HIGH POWER RF TRANSISTOR……Page 150
THE FIRST MATCHING ELEMENT: A SHUNT C……Page 149
CAPACITORS AT RADIO FREQUENCIES……Page 148
COMPONENT CONSIDERATIONS……Page 146
A PRACTICAL DESIGN EXAMPLE OF A SINGLE STAGE……Page 145
INTERSTAGE IMPEDANCE MATCHING……Page 143
IMPEDANCES AND MATCHING NETWORKS……Page 139
PUSH-PULL AMPLIFIERS……Page 136
MOSFETs……Page 135
PARALLEL TRANSISTOR AMPLIFIERS: BIPOLAR TRANSISTORS……Page 133
QUASI-LUMPED ELEMENT REALIZATION……Page 132
DISTRIBUTED CIRCUIT REALIZATION……Page 130
8 GENERAL……Page 163
MIMP DESCRIPTION……Page 170
SMITH CHARTS AND MIMP……Page 174
VSWR PROTECTION OF SOLID STATE AMPLIFIERS……Page 177
TESTING THE CIRCUIT……Page 181
OUTPUT FILTERING……Page 184
TYPES OF LOW PASS FILTERS……Page 186
THE DESIGN PROCEDURE……Page 188
THE COMPONENTS……Page 190
INTRODUCTION TO WIDEBAND CIRCUITS……Page 195
CONVENTIONAL TRANSFORMERS……Page 198
TWISTED WIRE TRANSFORMERS……Page 203
TRANSMISSION LINE TRANSFORMERS……Page 206
EQUAL DELAY TRANSMISSION LINE TRANSFORMERS……Page 209
11 INTRODUCTION……Page 213
BASIC TYPES OF POWER COMBINERS……Page 214
IN-PHASE AND 180 COMBINERS……Page 215
90 HYBRIDS……Page 218
LINE HYBRIDS……Page 219
RING HYBRIDS……Page 220
BRANCH LINE COUPLERS……Page 222
WILKINSON COUPLERS……Page 224
FREQUENCY COMPENSATION……Page 227
NEGATIVE FEEDBACK……Page 229
SCATTERING PARAMETERS……Page 235
NOISE PARAMETERS……Page 236
BIASING CONSIDERATIONS……Page 237
POWER GAIN……Page 240
STABILITY……Page 245
SUMMARY OF GAIN/NOISE FIGURE DESIGN PROCEDURES……Page 249
ACTUAL STEPS IN LOW POWER AMPLIFIER DESIGN……Page 250
DETERMINING DESIRED VALUES OF SOURCE AND LOAD IMPEDANCES……Page 251
CIRCUIT REALIZATION……Page 259
14 INTRODUCTION……Page 275
LDMOSFET VERSUS VERTICAL MOSFET……Page 276
DEVICE DESIGN……Page 277
LDMOS CHARACTERISTICS……Page 280
SOME FET APPROXIMATIONS……Page 283
APPLICATIONS OF LDMOS TRANSISTORS IN CURRENT GENERATION CELLULAR TECHNOLOGIES……Page 287
RF POWER AMPLIFIER CHARACTERISTICS……Page 289
PRACTICAL EXAMPLE OF DESIGNING A W-CDMA POWER AMPLIFIER……Page 293
CIRCUIT TECHNIQUES FOR DESIGNING OPTIMUM CDMA AMPLIFIERS……Page 297
MODELING OF LDMOS TRANSISTORS……Page 299
COMMENTS……Page 306
Index……Page 309