Processing of Wide Band Gap Semiconductors

Stephen J. Pearton0815514395, 9780815514398, 9780815518723

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

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Table of contents :
0815514395……Page 1
Wide Bandgap Semiconductors: Growth, Processing and Applications……Page 4
Copyright Page……Page 5
Contents……Page 14
1.0 INTRODUCTION……Page 22
2.0 AB INITIO CALCULATIONS OF DOPING LIMITATIONS……Page 27
3.0 THE FERMI LEVEL PINNING MODEL……Page 29
4.0 DOPING AND BAND STRUCTURE ENGINEERING……Page 44
5.0 OHMIC CONTACT TO p-ZnSe……Page 50
REFERENCES……Page 58
1.0 INTRODUCTION……Page 63
2.0 BINARY COMPOUNDS……Page 66
3.0 TERNARY AND QUATERNARY COMPOUNDS……Page 82
4.0 CONCLUDING REMARKS……Page 93
REFERENCES……Page 94
1.0 INTRODUCTION……Page 101
2.0 OHMIC CONTACTS TO GaAs……Page 119
3.0 OHMIC CONTACTS TO InP……Page 147
4.0 OHMIC CONTACTS TO GaN……Page 151
5.0 OHMIC CONTACTS TO ZnSe……Page 155
6.0 CONCLUSIONS……Page 158
REFERENCES……Page 159
1.0 INTRODUCTION……Page 172
2.0 REQUIREMENTS OF DRY ETCHING IN SiC DEVICE FABRICATION……Page 173
3.0 CHEMISTRY OF SiC DRY ETCHING……Page 175
4.0 METHODS FOR PLASMA-ASSISTED ETCHING OF SiC……Page 177
5.0 PROFILE AND MORPHOLOGY CONTROL WITH ECR ETCHING……Page 189
6.0 SUMMARY……Page 195
ACKNOWLEDGEMENTS……Page 196
REFERENCES……Page 197
1.0 BACKGROUND……Page 199
2.0 SILICON CARBIDE DEVICE PROCESSING……Page 210
3.0 SURVEY OF SiC DEVICES……Page 239
4.0 SiC CIRCUITS AND SENSORS……Page 250
5.0 CONCLUSIONS……Page 252
REFERENCES……Page 254
1.0 INTRODUCTION……Page 271
2.0. ETCH TECHNIQUES……Page 272
3.0 PLASMA CHEMISTRY……Page 281
5.0 ION ENERGY AND PLASMA DENSITY……Page 294
6.0 TEMPERATURE DEPENDENCE……Page 297
7.0 GROWTH TECHNIQUE……Page 300
8.0 ETCH PROFILE, MORPHOLOGY, AND STOICHIOMETRY……Page 301
9.0 PLASMA INDUCED DAMAGE……Page 305
10.0 PLASMA ETCH APPLICATIONS……Page 310
11.0 CONCLUSIONS……Page 313
REFERENCES……Page 315
1.0 INTRODUCTION……Page 321
2.0 IMPLANTATION ISOLATION……Page 322
3.0 IMPLANTATION DOPING……Page 330
4.0 IMPURITY REDISTRIBUTION……Page 346
5.0 IMPLANTATION DAMAGE: CREATION AND REMOVAL……Page 354
6.0 DEVICE DEMONSTRATIONS……Page 359
7.0 FUTURE WORK AND CONCLUSIONS……Page 367
REFERENCES……Page 368
ABSTRACT……Page 375
1.0 INTRODUCTION……Page 376
2.0 BASIC CONCEPTS……Page 377
3.0 INCORPORATION OF RE ATOMS IN WIDE GAP SEMICONDUCTORS……Page 383
4.0 RE 3+ PHOTOLUMINESCENCE……Page 388
5.0 ELECTRICAL ACTIVATION OF RE 3+ IONS……Page 404
6.0 SUMMARY……Page 409
REFERENCES……Page 410
1.0 INTRODUCTION……Page 414
3.0 SECONDARY ION MASS SPECTROMETRY (SIMS)……Page 415
4.0 SIMS ISSUES……Page 416
6.0 DIAMOND……Page 418
7.0 SiC……Page 426
8.0 ZnSe……Page 431
9.0 LiNbO3 (AND LiTaO3)……Page 433
10.0 GROUP III-NITRIDES……Page 438
11.0 ACKNOWLEDGMENTS……Page 445
REFERENCES……Page 448
1.0 INTRODUCTION……Page 450
2.0 HYDROGEN INCORPORATION IN WIDE BANDGAP SEMICONDUCTORS……Page 451
3.0 HYDROGEN IN GaN……Page 466
4.0 HYDROGEN IN SiC……Page 503
5.0 DIAMOND……Page 515
ACKNOWLEDGMENTS……Page 516
REFERENCES……Page 517
2.0 PROPERTIES……Page 527
3.0 FABRICATION……Page 530
4.0 MODIFICATION……Page 542
5.0 CHARACTERIZATION……Page 546
6.0 APPLICATIONS……Page 553
REFERENCES……Page 557
Index……Page 564