The physics and modeling of MOSFETS: surface-potential model HiSIM

Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki9789812568649, 9812568646

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Contents: Semiconductor Device Physics Basic Compact Surface-Potential Model of the MOSFET Advanced MOSFET Phenomena Modeling Capacitances Leakage Currents and Junction Diode Modeling of Phenomena Important for RF Applications Summary of HiSIM s Model Equations, Parameters, and Parameter-Extraction Method.

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Table of contents :
Contents……Page 12
Foreword……Page 6
Preface……Page 8
Definition of Symbols Used for Variables and Constants……Page 18
1.1.1 Energy Bands and Quasi Particles……Page 24
1.1.2 Effective Mass Approximation……Page 32
1.2.1 Impurities in Semiconductors……Page 35
1.2.2 Impurity Levels……Page 37
1.2.3 Number of Carriers under Thermal Equilibrium……Page 40
1.2.3.1 Carrier Density in Pure Semiconductors……Page 46
1.2.3.2 Carrier Density in Impure or Doped Semiconductors……Page 47
1.2.4 Fermi Level……Page 50
1.3 P-N Junction……Page 54
1.3.1 P-N Junction in Thermal Equilibrium……Page 56
1.3.2 P-N Junction with External Voltages……Page 63
1.4.1 Basic Equations……Page 68
1.4.2 Linearization and Discretization of Poisson Equation……Page 74
1.4.3 Device Simulation of MOSFETs……Page 78
1.5 Summary of Equations and Symbols Presented in Chapter 1 for Semiconductor Device Physics……Page 83
Bibliography……Page 98
2.1 Compact Modeling Concept……Page 100
2.2 Device Structure Parameters of the MOSFET……Page 108
2.3 Surface Potentials……Page 110
2.4 Charge Densities……Page 119
2.5 Drain Current……Page 127
2.6.2 Section 2.3: Surface Potentials……Page 133
2.6.4 Section 2.5: Drain Current……Page 134
Bibliography……Page 135
3.1 Threshold Voltage Shift……Page 140
3.1.1 (I) Short-Channel Effects……Page 142
3.1.2 (II) Reverse-Short-Channel Effects……Page 148
3.2 Depletion Effect of the Poly-Si Gate……Page 168
3.3 Quantum-Mechanical Effects……Page 173
3.4.1 Low Field Mobility……Page 181
3.4.2 High Field Mobility……Page 186
3.5 Channel-Length Modulation……Page 187
3.6 Narrow-Channel Effects……Page 199
3.6.1 Threshold Voltage Shift……Page 200
3.6.2 Mobility Modification due to a Narrow Gate……Page 202
3.6.3 Leakage Current due to STI Technology……Page 204
3.6.4 Small-Geometry Effects……Page 208
3.7 Effects of the Length of the Diffused Source/Drain Contacts in Shallow-Trench Isolation (STI) Technologies……Page 211
3.8 Temperature Dependences……Page 213
3.9 Conservation of Symmetry at Vds = 0……Page 218
3.10 Harmonic Distortions……Page 221
3.11.1 Section 3.1: Threshold Voltage Shift……Page 229
3.11.3 Section 3.3: Quatum-Mechanical Effects……Page 231
3.11.4 Section 3.4: Mobility Model……Page 232
3.11.5 Section 3.5: Channel-Length Modulation……Page 233
3.11.6 Section 3.6: Narrow-Channel Effects……Page 234
3.11.7 Section 3.7: Effect of the Source/Drain Diffusion Length for Shallow-Trench Isolation (STI) Technologies……Page 236
3.11.8 Section 3.8: Temperature Dependences……Page 237
Bibliography……Page 238
4.1 Intrinsic Capacitances……Page 246
4.2 Overlap Capacitances……Page 251
4.3 Longitudinal (Lateral) -Field-Induced Capacitance……Page 259
4.4 Fringing Capacitance……Page 262
4.5 Summary of Equations and Model Parameters Appearing in Chapter 4 for Capacitances……Page 264
Bibliography……Page 265
5.1.1 Substrate Current……Page 268
5.1.2 Gate Current……Page 271
5.1.3 GIDL (Gate-Induced Drain Leakage) Current……Page 274
5.2.1 Junction Current……Page 277
5.2.2 Junction Capacitance……Page 283
5.3.1 Section 5.1: Leakage Currents……Page 287
5.3.2 Section 5.2: Junction Diode……Page 288
Bibliography……Page 289
6.1 Noise Models……Page 292
6.1.1 1/f Noise Model……Page 293
6.1.2 Thermal Noise Model……Page 300
6.1.3 Induced Gate and Cross-Correlation Noise Model……Page 304
6.2 Non-Quasi-Static (NQS) Model……Page 313
6.2.1 Time-Domain Analysis……Page 314
6.2.2 Frequency-Domain Analysis……Page 324
6.3.1 Source/Drain Resistances……Page 333
6.3.2 Gate Resistance……Page 334
6.4.1 Section 6.1: Noise Models……Page 335
6.4.3 Section 6.3: External MOS Transistor Resistances……Page 336
Bibliography……Page 337
7.1.1 Physical Quantities……Page 342
7.1.2 MOSFET Size……Page 343
7.1.3 Temperature Dependence……Page 344
7.1.5 Threshold Voltage Shift Vth……Page 345
7.1.6 Mobility Model……Page 347
7.1.8 Channel-Length Modulation……Page 348
7.1.9 Shallow-Trench-Isolation (STI) Effect……Page 349
7.1.10 Capacitances……Page 350
7.1.12 Noise……Page 351
7.1.14 Parasitic Resistances……Page 352
7.2.2 Flags for Setting Model Options……Page 354
7.3 Model Parameters and their Meaning……Page 356
7.4 Default Values of the Model Parameter……Page 361
7.5 Parameter Extraction Method……Page 366
Bibliography……Page 371
Index……Page 372