Physics and applications of dilute nitrides

Irina A Buyanova,W M Chen,NetLibrary, Inc.0203334841, 9780203334843

Table of contents :
Book Cover……Page 1
Half-Title……Page 2
Title……Page 5
Copyright……Page 6
About the Series……Page 9
Preface……Page 11
Contributing Authors……Page 15
1 An Atomistic View of the Electronic Structure of Mixed-Anion III-V Nitrides……Page 16
2 Band Anticrossing in III-N-V Alloys: Theory and Experiments……Page 36
3 Tight-Binding and k·p Theory of Dilute Nitride Alloys……Page 83
4 Electron Effective Masses of Dilute Nitrides: Experiment……Page 111
5 Electronic Properties of (Ga,In)(N,As)-Based Heterostructures……Page 137
6 Role of Hydrogen in Dilute Nitrides……Page 181
7 Raman Scattering in Dilute GaAsN and GaPN Alloys……Page 225
8 Theory of Defects in Dilute Nitrides……Page 254
9 Recombination Processes in Dilute Nitrides……Page 287
10 Growth, Characterization, and Band-Gap Engineering of Dilute Nitrides……Page 316
11 GaInNAs Long-Wavelength Lasers for 1.3-µm-Range Applications……Page 346
12 Recombination Processes in GaInNAs Long-Wavelength Lasers……Page 377
13 Photovoltaic Applications of Dilute Nitrides……Page 411
14 GaInNAs and GaInNAsSb Long-Wavelength Lasers……Page 437
Index……Page 479