Microscopy of semiconducting materials: proceedings of the 14th conference, April 11-14, 2005, Oxford, UK

A.G. Cullis, J.L. Hutchison354031914X, 9783540319146, 9783540319153

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

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Table of contents :
Contents……Page 7
Preface……Page 6
Part I: Epitaxy: Wide Band-Gap Nitrides……Page 17
Structural properties of GaN quantum dots (Invited paper)……Page 18
Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes……Page 28
Investigation of In[sub(x)]Ga[sub(1-x)]N islands with electron microscopy……Page 32
First stage of nucleation of GaN on (0001) sapphire……Page 36
InGaN-GaN quantum wells: their luminescent and nano-structural properties……Page 40
Evolution of InGaN/GaN nanostructures and wetting layers during annealing……Page 44
Origins and reduction of threading dislocations in GaN epitaxial layers (Invited paper)……Page 48
Oxygen segregation to nanopipes in gallium nitride……Page 59
Strain relaxation in (Al,Ga)N/GaN heterostructures……Page 65
A TEM Study of AlN Interlayer Defects in AlGaN/GaN Heterostructures……Page 69
Reduction of threading dislocation density using in-situ SiN[sub(x)] interlayers……Page 73
The nucleation structure for cracks in AlGaN epitaxial layers……Page 77
Microstructural and optical characterisation of InN layers grown by MOCVD……Page 81
Structural properties of InN thin films grown with variable growth conditions on GaN/Al[sub(2)]O[sub(3)] by plasma-assisted MBE……Page 85
Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates……Page 89
Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers……Page 93
Characterization of defects in ZnS and GaN……Page 97
Part II: Epitaxy: Silicon-Germanium Alloys……Page 101
Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substrates……Page 102
TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB……Page 106
Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources……Page 110
TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers……Page 116
Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy……Page 120
A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM……Page 124
Part III: Epitaxy: Growth and Defect Phenomena……Page 128
Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructures (Invited paper)……Page 129
Beta to alpha transition and defects on SiC on Si grown by CVD……Page 143
Strain relaxation and void reduction in SiC on Si by Ge predeposition……Page 147
Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops……Page 151
Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy……Page 155
TEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAs……Page 159
First-principles calculations of 002 structure factors for electron scattering in strained In[sub(x)]Ga[sub(1-x)]As……Page 163
Structural characterisation of MBE grown zinc-blende Ga[sub(1-x)]Mn[sub(x)]N/GaAs(001) as a function of Ga flux……Page 167
Magic matching in semiconductor heterojunctions……Page 171
Changes in plasmon peak position in a GaAs/In[sub(0.2)]Ga[sub(0.8)]As structure……Page 175
Investigation of the electrical activity of dislocations in ZnO epilayers by transmission electron holography……Page 179
A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphire……Page 183
Part IV: High Resolution Microscopy and Nanoanalysis……Page 187
Aberration-corrected HREM/STEM for semiconductor research (Invited paper)……Page 188
Spherical aberration correction and exit-plane wave function reconstruction: Synergetic tools for the atomic-scale imaging of structural imperfections in semiconductor materials……Page 194
Strain mapping from HRTEM images……Page 202
Quantification of the influence of TEM operation parameters on the error of HREM image matching……Page 206
ConceptEM: a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxide……Page 210
Electron holography of doped semiconductors: when does it work and is it quantitative? (Invited paper)……Page 214
Why does a p-doped area show a higher contrast in electron holography than a n-doped area of the same dopant concentration?……Page 224
Interference electron microscopy of reverse-biased p-n junctions……Page 228
Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions……Page 232
Towards quantitative electron holography of electrostatic potentials in doped semiconductors……Page 236
Three-dimensional analysis of the dopant potential of a silicon p-n junction by holographic tomography……Page 240
Ab initio computation of the mean inner Coulomb potential for technologically important semiconductors……Page 244
Part V: Self-Organised and Quantum Domain Structures……Page 248
Electron microscopy and optical spectroscopy of single InAs/InP quantum dots……Page 249
The structure of coherent and incoherent InAs/GaAs quantum dots……Page 253
Vertical correlation-anticorrelation transition in InAs/GaAs quantum dot structures grown by molecular beam epitaxy……Page 261
Effect of annealing on anticorrelated InGaAs/GaAs quantum dots……Page 265
Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra……Page 269
Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-µm InAs quantum dots……Page 273
Microstructural studies of InAs/GaAs self-assembled quantum dots grown by selective area molecular beam epitaxy……Page 277
Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings……Page 281
In distribution in InGaAs quantum wells and quantum islands……Page 285
Activation energy for surface diffusion in GaInNAs quantum wells……Page 289
Growth and surface structure of silicon nanowires observed in real time in the electron microscope……Page 293
Self-catalytic growth of gallium nitride nanoneedles under Ga-rich conditions……Page 297
Nanocontacts fabricated by focused ion beam: characterisation and application to nanometre-sized materials……Page 301
Cross-sectional studies of epitaxial growth of InP and GaP nanowires on Si and Ge……Page 305
Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method……Page 309
Measurement of the mean inner potential of ZnO nanorods by transmission electron holography……Page 313
Quantum effects in band gap-modulated amorphous carbon superlattices……Page 317
Structure of rolled-up semiconductor nanotubes……Page 321
Defects and interfaces in nanoparticles……Page 325
TEM characterization of magnetic Sm- and Co-nanocrystals in SiC……Page 329
Microscopy of nanoparticles for semiconductor devices……Page 333
Structural and electrophysical properties of a nanocomposite based upon the Si-SiO[sub(2)] system……Page 337
HRTEM and XRD analysis of P6mm and Ia3d double gyroidal WO[sub(3)] structures……Page 343
Part VI: Processed Silicon and Other Device Materials……Page 347
Research highlights and impacts upon industry for nanoelectronics in the university system of Taiwan (Invited paper)……Page 348
TEM investigations of epitaxial high-κ dielectrics on silicon……Page 352
Damage layer in silica-based low-k material induced by the patterning plasma process studied by energy-filtered TEM……Page 356
Measurement of field-emission properties of a single crystal silicon emitter using scanning electron microscopy……Page 360
Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon……Page 364
On the mechanism of {113}-defect formation in Si……Page 368
The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments……Page 372
HREM study of an epitaxial growth defect……Page 376
Resonant Raman microscopy of stress in silicon-based microelectronics……Page 380
TEM study of silicon implanted with fluorine and boron applied to piezoresistor manufacturing……Page 384
Silicides for advanced CMOS devices (Invited paper)……Page 388
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN……Page 398
Dynamics of Au Adatoms on Electron-Irradiated Rough Si Surfaces……Page 402
Corrosion of FIB-milled Cu during air exposure……Page 406
Part VII: Device Studies……Page 410
FIB applications for semiconductor device failure analysis (Invited paper)……Page 411
A method for 3D failure analysis using a dedicated FIB-STEM system……Page 417
Failure analysis studies in pseudomorphic SiGe channel p-MOSFET devices……Page 421
TEM specimen preparation technique for III-V semiconductor devices by using a novel FIB-Ar ion milling method……Page 425
Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques……Page 431
An organic two dimensional photonic crystal microcavity processed by focused ion beam milling……Page 435
Failure analysis of degraded (In,Ga)P/GaAs heterojunction bipolar transistors by TEM……Page 440
Strain measurements of ULSI devices using LACBED with TSUPREM modeled displacements……Page 444
Electron holography for visualisation of different doped areas in silicon-germanium heterojunction bipolar transistors……Page 448
Ar sputter shadow method (ASSM) – a novel way to overcome the charging effect during AES bond pad analysis……Page 452
Part VIII: Scanning Electron and Scanning Probe Advances……Page 456
Challenges and opportunities of Ångstrom-level analysis (Invited paper)……Page 457
Sub-Ångstrom and 3-dimensional STEM for semiconductor research……Page 465
Cathodoluminescence studies of AlGaAs/GaAs core-shell nanowires……Page 469
Carrier diffusion lengths of (In,Ga)As, GaAs and (In,Ga)(As,N) quantum wells studied by spatially resolved cathodoluminescence……Page 473
An analysis of the alpha parameter used for extracting surface recombination velocity in EBIC measurements……Page 477
The effects of boundary conditions on dopant region imaging in scanning electron microscopy……Page 481
A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures……Page 485
Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopy……Page 489
Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy……Page 493
Mapping of the effective electron mass in III-V semiconductors……Page 497
Reconstruction of images of surface height in scanning electron microscopy……Page 501
Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors……Page 505
The electric field and dopant distribution in p-i-n structures observed by ionisation potential (dopant contrast) microscopy in the HRSEM……Page 509
Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination……Page 513
Electron microscopy characterisation of ZnS:Cu:Cl phosphors……Page 517
Resistive contrast in R-EBIC from thin films……Page 521
A diode model for SEM-REBIC contrast in ZnO varistors……Page 525
The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors……Page 529
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