Thomas P. Pearsall (Eds.)012752133X, 9780127521336, 9780080864303
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices. |
Table of contents : Content: Edited by Page iii Copyright page Page iv Contributors Page vii Preface Page ix Thomas P. Pearsall Chapter 1 Principles and Concepts of Strained-Layer Epitaxy Original Research Article Pages 1-72 R. Hull, J.C. Bean Chapter 2 Device Applications of Strained-Layer Epitaxy Original Research Article Pages 73-138 William J. Schaff, Paul J. Tasker, Mark C. Foisy, Lester F. Eastman Chapter 3 Structure and Characterization of Strained-Layer Superlattices Original Research Article Pages 139-222 S.T. Picraux, B.L. Doyle, J.Y. Tsao Chapter 4 Group-IV Compounds Original Research Article Pages 223-309 E. Kasper, F. Schäffler Chapter 5 Molecular-Beam Epitaxy of IV-VI Compound Heterojunctions and Superlattices Original Research Article Pages 311-336 Dale L. Partin Chapter 6 Molecular-Beam Epitaxy of II–VI Semiconductor Microstructures Original Research Article Pages 337-409 Robert L. Gunshor, Leslie A. Kolodziejski, Arto V. Nurmikko, Nobuo Otsuka Index Pages 411-421 |
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