Quantum Dots

E. Borovitskaya, Michael Shur9789810249182, 981-02-4918-7

In this book, leading experts on quantum dot theory and technology provide comprehensive reviews of all aspects of quantum dot systems. The following topics are covered: (1) energy states in quantum dots, including the effects of strain and many-body effects; (2) self-assembly and self-ordering of quantum dots in semiconductor systems; (3) growth, structures, and optical properties of III-nitride quantum dots; (4) quantum dot lasers.

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Table of contents :
CONTENTS……Page 8
Low-Dimensional Systems……Page 9
1. Introduction……Page 23
2. Description of Pseudopotential Techniques……Page 25
2.1. Calculation of the strain profile……Page 26
2.2. Constructing the single particle Hamiltonian……Page 28
3. Recent Applications……Page 34
3.1. Pyramidal quantum dots: Single particle electron and hole states……Page 35
3.2. Lens shaped dots: The effect of changing the shape and composition profile……Page 38
3.3. Multiple-exciton states in self-assembled quantum dots……Page 43
References……Page 50
1 Introduction……Page 53
2 Quantum Dot Self-Assembly……Page 55
2.1 Equilibrium properties of coherent 3D islands……Page 56
2.2 Formation and evolution of coherent 3D islands……Page 63
3.1 Single Layers……Page 70
3.2 Multilayers……Page 74
3.3 Summary and Outlook……Page 80
References……Page 81
1. Introduction……Page 87
2. Growth and Structures……Page 89
2.1 MBE……Page 90
2.2 MOCVD……Page 96
2.3 Other Techniques……Page 99
3. Optical Properties of Ill-Nitride QDs……Page 101
3.1 Effects of quantum confinement strain and polarization……Page 102
3.2 GaN quantum dots……Page 106
3.3 InGaN quantum dots……Page 112
4. Summary……Page 115
References……Page 116
Theory of Threshold Characteristics of Quantum Dot Lasers: Effect of Quantum Dot Parameter Dispersion……Page 119
1. Introduction……Page 120
2. Basic Equations……Page 121
3.1. Equilibrium filling of QDs (relatively high temperatures and/or shallow potential wells)……Page 124
3.2. Nonequilibrium filling of QDs (relatively low temperatures and/or deep potential wells; region C in Fig. 2)……Page 128
4.1. Carrier photoexcitation from QDs to the continuum……Page 129
4.2. Critical tolerable parameters……Page 130
4.3. Equilibrium filling of QDs and narrow line of the quantized energy distribution……Page 131
4.4. Nonequilibrium filling of QDs……Page 141
5. Violation of the Charge Neutrality in QDs……Page 143
5.1. Calculations for a p-i-n heterostructure……Page 144
5.2. Effect of neutrality violation on the optimization of a laser……Page 150
5.3. Gain-current dependence……Page 152
5.4. Current-voltage dependence……Page 154
6. Temperature Dependence of the Threshold Current……Page 156
6.1. Threshold current density and its components……Page 157
6.2. Characteristic temperature……Page 160
6.3. Temperature dependence of jth and T0 for optimized structures……Page 165
7. Longitudinal Spatial Hole Burning……Page 168
7.1. Rate equations……Page 170
7.2. Multimode generation threshold……Page 173
8. Conclusions……Page 180
References……Page 182
Applications of Quantum Dots in Semiconductor Lasers……Page 185
1. INTRODUCTION……Page 186
2.1. General……Page 187
2.2. Growth fundamentals of QDs……Page 188
2.3. Long-wavelength emission in structures with vertically-coupled QDs……Page 189
2.4. Long-wavelength emission in QDs formed by activated alloy phase separation……Page 190
2.5. Defects in long-wavelength QDs and defect reduction techniques……Page 191
2.6. Long-wavelength emission from wavelength InGaAsN insertions in a GaAs matrix……Page 193
3.1. QD lasers……Page 194
3.2. Long wavelength QD VCSELs……Page 198
4. COMPARISON OF THE PERFORMANCE OF LONG-WAVELENGTH LASERS OBTAINED USING DIFFERENT TECHNIQUES……Page 199
4.1. Competitors……Page 200
4.2. Comparison of process technologies material systems and device performance in the work of different authors……Page 204
5. CONCLUSION……Page 207
REFERENCES……Page 208